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Two-in-One IGBT Module optimizes parallel connections

12/23/2014 23:20:04

Supplied in 172 x 89 x 38 mm or 250 x 89 x 38 mm package, High-Power 2-in-1 IGBT Module series feature V-IGBT chip that minimizes power loss and are manufactured with ultrasonic bonding technology that promotes reliability in heat cycle. Each RoHS-compatible model is designed to realize low inductance and current balance of parallel-connected semiconductors. Models with 1,200 V rating offer choice of 600, 900, or 1,400 A, while 1,700 V models offer 650 and 1,000 A options.